IPB120N03S4L03ATMA1 Infineon Technologies

IPB120N03S4L03ATMA1

N-Channel 30 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3

Images are for reference only.

SkyChip No.

PNW9V-IPB120N03S4L03ATMA1TR

OPN#

IPB120N03S4L03ATMA1

Manufacturer

Description

MOSFET N-CH 30V 120A D2PAK

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IPB120N03S4L-03

· Mult Dev OBS 30/Sep/2022

HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 (2015/863) Compliant
US ECCN	EAR99

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tape & Reel

108 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
RDS(on) Specification Drive Voltage	4.5V, 10V
Qualification	AEC-Q101
Power Dissipation (Max)	79W (Tc)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Mfr. Package Type	PG-TO263-3
Base Product Number	IPB120
Input Capacitance (Max.) @ Vds	5300 pF @ 25 V
Grade	Automotive
Gate-Source Voltage (Max.)	±16V
Gate Threshold Voltage (Max.) @ ID	2.2V @ 40µA
Gate Charge (Max.) @ Vgs	72 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	30 V
Drain Source On-Resistance (Max.) @ ID, Vgs	3mOhm @ 100A, 10V
Continuous Drain Current @ 25°C	120A (Tc)