SCT3080ALGC11 Rohm Semiconductor

SCT3080ALGC11

N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N

Images are for reference only.

SkyChip No.

KM1J0-SCT3080ALGC11T

OPN#

SCT3080ALGC11

Manufacturer

Rohm Semiconductor

Description

SICFET N-CH 650V 30A TO247N

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

27 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· SCT3080ALGC11

· TO-247N Taping Spec

· SiC Flammability

· TO-247N SiC Part Marking

· SCT3080AL ESD Data

· TO-247N MOS Constitution Material List

· SiC Level 1 MSL

· SiC Whisker Info

· TO-247N Inner Structure

· SCT3080AL Spice Model

· MOS-3GTHD Reliability Test

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Total Stock: 614

Available Qty 328

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$6.7296

Ext. Price:$6.7296

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$6.7296	$6.7296
30	$5.9760	$179.2800

* All prices are exclusive of tax, for reference only, and subject to change.

Delivery & Payment

Technology	SiCFET (Silicon Carbide)
RDS(on) Specification Drive Voltage	18V
Power Dissipation (Max)	134W (Tc)
Package / Case	TO-247-3
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247N
Base Product Number	SCT3080
Input Capacitance (Max.) @ Vds	571 pF @ 500 V
Gate-Source Voltage (Max.)	+22V, -4V
Gate Threshold Voltage (Max.) @ ID	5.6V @ 5mA
Gate Charge (Max.) @ Vgs	48 nC @ 18 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	104mOhm @ 10A, 18V
Continuous Drain Current @ 25°C	30A (Tc)