STP11NM60FD STMicroelectronics

STP11NM60FD

N-Channel 600 V 11A (Tc) 160W (Tc) Through Hole TO-220

Images are for reference only.

SkyChip No.

L7HI1-STP11NM60FDT

OPN#

STP11NM60FD

Manufacturer

Description

MOSFET N-CH 600V 11A TO220AB

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

14 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· STB11NM60FD(-1), STP11NM60FD(FP)

· STP11NM60FD View All Specifications

· 600V N-Channel Power MOSFET with Fast Diode & Insulated Package

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 371

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$3.5616

Ext. Price:$3.5616

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	FDmesh™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	160W (Tc)
Package / Case	TO-220-3
Mounting Type	Through Hole
Mfr. Package Type	TO-220
Base Product Number	STP11
Input Capacitance (Max.) @ Vds	900 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	5V @ 250µA
Gate Charge (Max.) @ Vgs	40 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	600 V
Drain Source On-Resistance (Max.) @ ID, Vgs	450mOhm @ 5.5A, 10V
Continuous Drain Current @ 25°C	11A (Tc)