IRFB3207PBF Infineon Technologies

IRFB3207PBF

N-Channel 75 V 170A (Tc) 330W (Tc) Through Hole TO-220AB

Images are for reference only.

SkyChip No.

MWJ15-IRFB3207PBFT

OPN#

IRFB3207PBF

Manufacturer

Description

MOSFET N-CH 75V 170A TO220AB

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

13 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· IRFB3207, IRFS(L)3207

· IR Part Numbering System

· IRFB3207PBF Saber Model

· High-Current Low-RDS(on) N-Channel Power MOSFET with Fast Switching

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 294

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$2.6208

Ext. Price:$2.6208

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	HEXFET®
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	330W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220AB
Base Product Number	IRFB3207
Input Capacitance (Max.) @ Vds	7600 pF @ 50 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4V @ 250µA
Gate Charge (Max.) @ Vgs	260 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	75 V
Drain Source On-Resistance (Max.) @ ID, Vgs	4.5mOhm @ 75A, 10V
Continuous Drain Current @ 25°C	170A (Tc)