FCP125N65S3 onsemi

FCP125N65S3

N-Channel 650 V 24A (Tc) 181W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

C34QM-FCP125N65S3T

OPN#

FCP125N65S3

Manufacturer

Description

MOSFET N-CH 650V 24A TO220-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

52 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· FCP125N65S3

· onsemi RoHS

· Material Declaration FCP125N65S3

· SuperFet Datasheet Chg 30/Jul/2019

· Mult Dev 23/Oct/2023

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 1041

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$4.5120

Ext. Price:$4.5120

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperFET® III
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	181W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FCP125
Input Capacitance (Max.) @ Vds	1940 pF @ 400 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 2.4mA
Gate Charge (Max.) @ Vgs	46 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	125mOhm @ 12A, 10V
Continuous Drain Current @ 25°C	24A (Tc)

Ciss (pF)	1940
Configuration	Single
Coss (pF)	40
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	24
Package Type	TO-220-3
PD (Max.) (W)	181
Qg @ VGS=10V (nC)	46
Qgd @ VGS=4.5V (nC)	19
Qrr (nC)	5700
RDS(on) (Max.) @ VGS=10V (mΩ)	125
V(BR)DSS (Min.) (V)	650
VGS (Max.) (V)	±30
Vgs(th) (Max.) (V)	4.5