FCP360N65S3R0 onsemi

FCP360N65S3R0

N-Channel 650 V 10A (Tc) 83W (Tc) Through Hole TO-220-3

Images are for reference only.

SkyChip No.

4YNZ3-FCP360N65S3R0T

OPN#

FCP360N65S3R0

Manufacturer

Description

MOSFET N-CH 650V 10A TO220-3

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

52 Weeks

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

· FCP360N65S3R0

· onsemi RoHS

· onsemi REACH

· Material Declaration FCP360N65S3R0

· SuperFet Datasheet Chg 30/Jul/2019

· Mult Dev 23/Oct/2023

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Available Qty 159

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Shipping:

48 hours

Packaging

Tube

* Quantity

Unit Price:$3.3120

Ext. Price:$3.3120

* All prices are exclusive of tax, for reference only, and subject to change.

Technology	MOSFET (Metal Oxide)
Series	SuperFET® III
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	83W (Tc)
Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220-3
Base Product Number	FCP360
Input Capacitance (Max.) @ Vds	730 pF @ 400 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 1mA
Gate Charge (Max.) @ Vgs	18 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	650 V
Drain Source On-Resistance (Max.) @ ID, Vgs	360mOhm @ 5A, 10V
Continuous Drain Current @ 25°C	10A (Tc)

Ciss (pF)	730
Configuration	Single
Coss (pF)	15
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	10
Package Type	TO-220-3
PD (Max.) (W)	83
Qg @ VGS=10V (nC)	18
Qgd @ VGS=4.5V (nC)	7.6
Qrr (nC)	2400
RDS(on) (Max.) @ VGS=10V (mΩ)	360
V(BR)DSS (Min.) (V)	650
VGS (Max.) (V)	30
Vgs(th) (Max.) (V)	4.5