R8008ANX Rohm Semiconductor

R8008ANX

N-Channel 800 V 8A (Ta) 50W (Tc) Through Hole TO-220FM

Images are for reference only.

SkyChip No.

GEI0E-R8008ANXB

OPN#

R8008ANX

Manufacturer

Rohm Semiconductor

Description

MOSFET N-CH 800V 8A TO220FM

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· R8008ANX

· TO220FM Inner Structure

· Transistor, MOSFET Flammability

· TO-220FM Part Marking

· Transistor Whisker Info

· TO-220FM Constitution Material List

· R8008ANX ESD Data

· Transistor, MOSFET Level 1 MSL

· R8008ANX Spice Model

· TO220FM MOS Reliability Test

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	1 (Unlimited @ ≤ 30°C/85% RH)
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

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Part Number	Manufacturer	Availability	Pricing	SkyChip No.
R8009KNXC7G	Rohm Semiconductor	0	$4.54	QJHJE-R8009KNXC7GTR
FCPF1300N80Z	onsemi	245	$2.71	EU01D-FCPF1300N80ZT
FCPF1300N80ZYD	onsemi	0	$0.38	Z8DO6-FCPF1300N80ZYDT
IPA60R1K0CEXKSA1	Infineon Technologies	326	$1.27	0AHCS-IPA60R1K0CEXKSA1T
IPAW70R950CEXKSA1	Infineon Technologies	0	$0.76	6QROA-IPAW70R950CEXKSA1T
SPA04N80C3XKSA1	Infineon Technologies	0	$0.98	G3HKW-SPA04N80C3XKSA1T
STF6N60M2	STMicroelectronics	0	$1.59	GYO1A-STF6N60M2T
STF8N80K5	STMicroelectronics	694	$2.7	HZFUW-STF8N80K5T
STP6NK60ZFP	STMicroelectronics	711	$2.13	3AT11-STP6NK60ZFPT
TK6A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	11	$2.39	6A82V-TK6A65D-STA4-Q-MT

Standard Supply

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Bulk

Supply Chain Inventory

336 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	50W (Tc)
Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-220FM
Base Product Number	R8008
Input Capacitance (Max.) @ Vds	1080 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	5V @ 1mA
Gate Charge (Max.) @ Vgs	39 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	1.03Ohm @ 4A, 10V
Continuous Drain Current @ 25°C	8A (Ta)