FQAF13N80 onsemi

FQAF13N80

N-Channel 800 V 8A (Tc) 120W (Tc) Through Hole TO-3PF

Images are for reference only.

SkyChip No.

1CQLP-FQAF13N80T

OPN#

FQAF13N80

Manufacturer

onsemi

Description

MOSFET N-CH 800V 8A TO3PF

Datasheet

Lifecycle Status

End of Life

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· FQAF13N80

· onsemi RoHS

· onsemi REACH

· Material Declaration FQAF13N80

· Mult Dev EOL 30/Jun/2022

· Logo 17/Aug/2017

· Tape and Box/Reel Barcode Update 07/Aug/2014

· Mult Devices 24/Oct/2017

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
MSL	Non-Moisture Sensitive
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

Possible Alternative Parts

Part Number:FCH085N80-F155

Manufacturer:onsemi

Availability:437

Pricing$18.19

SkyChip No.:F56R4-FCH085N80-F155T

Part Number:STW10NK80Z

Manufacturer:STMicroelectronics

Availability:553

Pricing$5.73

SkyChip No.:97Q85-STW10NK80ZT

Part Number	Manufacturer	Availability	Pricing	SkyChip No.
FCH085N80-F155	onsemi	437	$18.19	F56R4-FCH085N80-F155T
STW10NK80Z	STMicroelectronics	553	$5.73	97Q85-STW10NK80ZT

Obsolete

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

356 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

3 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	QFET®
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	120W (Tc)
Package / Case	TO-3P-3 Full Pack
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-3PF
Base Product Number	FQAF13
Input Capacitance (Max.) @ Vds	3500 pF @ 25 V
Gate-Source Voltage (Max.)	±30V
Gate Threshold Voltage (Max.) @ ID	5V @ 250µA
Gate Charge (Max.) @ Vgs	88 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	750mOhm @ 4A, 10V
Continuous Drain Current @ 25°C	8A (Tc)

Ciss (pF)	2700
Configuration	Single
Coss (pF)	275
Crss (pF)	30
Description	N-Channel, High Voltage MOSFET, Standard Level
ID (Max.) (A)	8
Package Type	TO-3PF-3L
PD (Max.) (W)	120
Qg @ VGS=10V (nC)	68
Qgd @ VGS=4.5V (nC)	32
Qrr (nC)	11300
RDS(on) (Max.) @ VGS=10V (mΩ)	750
V(BR)DSS (Min.) (V)	800
VGS (Max.) (V)	±30
Vgs(th) (Max.) (V)	5