IXFH11N80 IXYS

IXFH11N80

N-Channel 800 V 11A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Images are for reference only.

SkyChip No.

5QA75-IXFH11N80T

OPN#

IXFH11N80

Manufacturer

IXYS

Description

MOSFET N-CH 800V 11A TO247AD

Datasheet

Lifecycle Status

Full Production

Factory Lead Time

· Free Samples Available

· Alternate Part Support

· PCB Assembly (PCBA)

· IC Programming Services

Parameters

Technical Documentation

· Ixys IC REACH

· Mult DEV Design 18/Oct/2024

· Mult DEV Mult Changes 13/May/2024

· High Voltage N-Channel Power MOSFET for Fast Switching Applications

ECCN	EAR99
HTSUS	8541.29.0095 Article Desc. : Suffix (95) - Transistors, Other Than Photosensitive Transistors; Other Unit of Quantity : No. General Rate : Free
REACH Compliance	REACH SVHC Free
RoHS Status	RoHS 3 Compliant (Pb-Free)

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Part Number	Manufacturer	Availability	Pricing	SkyChip No.
APT11N80BC3G	Microchip Technology	88	$4.47	ZRXKY-APT11N80BC3GT
APT14M100B	Microchip Technology	0	$6.84	42GKE-APT14M100BT
IRFPC40PBF	Vishay Siliconix	306	$2	X2J2F-IRFPC40PBFT
SPW11N80C3FKSA1	Infineon Technologies	617	$3.84	LUA13-SPW11N80C3FKSA1T
SPW17N80C3FKSA1	Infineon Technologies	0	$5.18	8M2GS-SPW17N80C3FKSA1T
STW10NK80Z	STMicroelectronics	553	$5.73	97Q85-STW10NK80ZT
STW8NK80Z	STMicroelectronics	588	$2.4	VGCPX-STW8NK80ZT

Standard Supply

New Arrivals at SkyChip

MOQ

1(Multiples: 1)

Ships From

Shenzhen (Primary) or Hong Kong

Lead Time

To Be Determined

Packaging

Tube

Supply Chain Inventory

307 In Stock

Stock Status

Confirmed

Supply Source

Independently Sourced

Lead Time to SkyChip

5 Business Days

* These inventory figures are provided by our partners and are subject to change with a delay.

Delivery & Payment

Technology	MOSFET (Metal Oxide)
Series	HiPerFET™
RDS(on) Specification Drive Voltage	10V
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-247-3
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Mfr. Package Type	TO-247AD (IXFH)
Base Product Number	IXFH11
Input Capacitance (Max.) @ Vds	4200 pF @ 25 V
Gate-Source Voltage (Max.)	±20V
Gate Threshold Voltage (Max.) @ ID	4.5V @ 4mA
Gate Charge (Max.) @ Vgs	155 nC @ 10 V
FET Type	N-Channel
Drain-Source Voltage	800 V
Drain Source On-Resistance (Max.) @ ID, Vgs	950mOhm @ 500mA, 10V
Continuous Drain Current @ 25°C	11A (Tc)